Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme

Philippe Leduc, Didier Magnon, Fabrice Guitton

Abstract


Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN) resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate"). The results show the unicity in most cases of the lumped element determination, which leads to a precise simulation of self-resonant frequencies.

 

 


Keywords


RF ICs, TaN resistors, Experimental Modeling, Circuit Optimization, Guess-Timate.

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DOI: http://dx.doi.org/10.24200/squjs.vol7iss1pp71-80

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Copyright (c) 2017 Philippe Leduc, Didier Magnon, Fabrice Guitton

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