Surface Preparation of InAs (110) Using Atomic Hydrogen

T.D. Veal, C.F. McConville, S.H. Al-Harthi

Abstract


Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110) surfaces.  X-ray photoelectron spectroscopy (XPS) was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED) and high-resolution electron-energy-loss spectroscopy (HREELS) were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110)-(1×1) surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

 

 


Keywords


InAs(110), Hydrogen Cleaning, Plasmon Excitations, HREEL, XPS

Full Text:

PDF

References


AQUINO, A. A., HILL, J. J. and JONES, T. S. 1995. Evidence for a surface methylene species in the decomposition of trimethylgallium on GaAs(100)-(4×1): a high resolution electron energy loss spectroscopy study. Surf. Sci. 327: 74-80.

BELL, G.R., MCCONVILLE, C.F. and JONES, T.S. 1996a. Plasma excitations and the effects of surface preparation in n-type InAs(001) studied by electron energy loss spectroscopy. Appl. Surf. Sci. 104/105: 17-23.

BELL, G.R., MCCONVILLE, C.F. and JONES, T.S. 1996b. Plasma excitations and accumulation layers in heavily doped InAs(001). Phys. Rev. B 54: 2654-2661.

BELL, G.R., JONES, T.S. and MCCONVILLE, C.F. 1997. Accumulation layer profiles at InAs polar surfaces. Appl. Phys. Lett. 71: 3688-3690.

BELL, G.R., KAIJAKS, N.S., DIXON, R.J. and MCCONVILLE, C.F. 1998. Atomic hydrogen cleaning of polar III-V semiconductor surfaces. Surf. Sci. 401: 125-137.

CHEN, Y., HERMANSON J.C. and LAPEYRE, G.J. 1989. Coupled plasmon and phonon in the accumulation layer of InAs(110) cleaved surfaces. Phys. Rev. B 39: 12682-12687.

GOTO, S., YAMADA, M. and NOMURA, Y. 1995. Surface cleaning of Si doped/undoped GaAs substrates. Jpn. J. Appl. Phys. 234: L1180-L1183.

IBACH, H. and MILLS, D.L. 1982. Electron Energy Loss Spectroscopy and Surface Vibrations, Academic, New York.

JONES, T.S., ASHTON, M.R., RICHARDSON, N.V. and MCCONVILLE, C.F. 1989. Electron energy-loss studies of InSb (100). J. Phys.: Condens. Matter 1: SB207-SB208.

KARLSSON, H.S., VISELGA, R. and KARLSSON, U.O. 1998. Electron accumulation at the InAs(110) cleavage surface. Title. Surf. Sci. 402-404: 822-826.

KIKAWA, T., OCHIAI, I. and TAKATANI, S. 1994. Atomic hydrogen cleaning of GaAs and InP surfaces studied by photoemission spectroscopy. Surf. Sci. 316: 238-46.

LAMBIN, Ph., VIGNERON, J. and LUCAS, A.A. 1990. Computation of the surface electron-energy-loss spectrum in specular geometry for an arbitrary plane-stratified medium. Computer Phys. Commun. 60: 351-64.

LIANG, Y., PACKARD, W.E., DOW, J.D., HO, H. and LAPEYRE, G.J. 1993. Monatomic steps on the InAs(110) surface. Phys. Rev. B 48: 11942-11945.

MAGNEE, P.H.C., DEN HARTOG, S.G., VAN WEES, B.J., KLAPWIJK, T.M., VAN DE GRAAF, W. and BORGHS, G. 1995. Influence of low-energy Ar-sputtering on the electronic-properties of InAs-based quantum-well structures. Appl. Phys. Lett. 67: 3569-3571.

MIKHAILOV, G.M., BUKIN, P.V., KHUDOBIN, S.A., CHUMAKOV, A.A. and SHAPOVAL, S.Y. 1992. XPS investigation of the interaction between ECR-excited hydrogen and the native oxide of GaAs(100). Vacuum 43: 199-201.

MONCH, W. 1993. Semiconductor surfaces and interfaces. Springer, Berlin.

MOULDET, J.F., STICKLE, W.F., SOBOL P.E. and BOMBEN, K.D. 1992. Handbook of X-ray Photoelectron Spectroscopy. ed. J. Chastain. Perkin-Elmer Corporation, Eden Prairie, MN.

OLSSON, L.O., ANDERSSON, C.B.M., HAKANSSON, M.C., KANSKI, J., ILVER, L. and KARLSSON, U.O. 1996. Charge accumulation at InAs surfaces. Phys. Rev. Lett. 76: 3626-3629.

PETIT, E.J., HOUZAY, F. and MOISON, J.M. 1992. Interaction of atomic hydrogen with native oxides on InP(100). Surf. Sci. 269/270: 902-908.

PETIT, E.J. and HOUZAY, F. 1994. Optimal surface cleaning of GaAs(001) with atomic hydrogen. J. Vac. Sci. Technol. B 12: 547-550.

SCHAFER, M., NAUMANN, W., FINNBERG, T., HANNSS, M., DUTSCHKE, A., and ANTON, R. 2000. UV/ozone-activated growth of oxide layers on InAs(001) surfaces and oxide desorption under arsenic pressure. Appl. Surf. Sci., 158: 147-158.

SCHAEFER, J.A., PERSCH, V., STOCK, S., ALLINGER, TH. and GOLDMANN, A. 1990. Etching of GaAs(100) by activated hydrogen. Europhys. Lett. 12: 563-568.

SUTOH, A., OKADA, Y., and KAWABE, M. 1995. Cracking efficiency of hydrogen with tungsten filament in molecular beam epitaxy. Jpn. J. Appl. Phys. 234: L1379-L1382.

VEAL, T.D. and MCCONVILLE, C.F. 2000. Controlled oxide removal for the preparation of damage-free InAs(110) surfaces. Appl. Phys. Lett. 77: 1665-1667.

VEAL, T.D. and MCCONVILLE, C.F. 2001. Profiling of electron accumulation layers in the near-surface region of InAs(110). Phys. Rev. B 64: 085311.

WOLAN, J.T., MOUNT, C.K. and HOFLUND, G.B. 1997. Chemical reactions induced by the room temperature interaction of hyperthermal atomic hydrogen with the native oxide layer on GaAs(001) surfaces studied by ion scattering spectroscopy and x-ray photoelectron spectroscopy. J. Vac. Sci. Technol. A 15: 2502-2506.

YAMADA, M., IDE, Y., and TONE, K. 1993. Interaction of atomic-hydrogen with GaAs(001) surface oxide – volatile Ga-oxide formation. Appl. Surf. Sci. 70/71: 531-535.




DOI: http://dx.doi.org/10.24200/squjs.vol7iss2pp303-310

Refbacks

  • There are currently no refbacks.


Copyright (c) 2017 T.D. Veal, C.F. McConville, S.H. Al-Harthi

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.

SQUJS 2017-CC BY-ND

This journal and its content is licensed under a Attribution-NoDerivatives 4.0 International.

Flag Counter