Spin Torque Oscillator for High Performance Magnetic Memory

Rachid Sbiaa, Khaled Bouziane

Abstract


A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO), and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ) should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in  the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.

Keywords


Magnetic random access memory; Spin transfer torque; Magnetization reversal; Magnetic tunnel junction; Spin torque oscillator.

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References


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DOI: http://dx.doi.org/10.24200/squjs.vol20iss1pp77-82

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