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Abstract
High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common- base topologies have been designed for fiber-optic receivers. In particular a design approach, hereafter called "A more- FET approach", added a new dimension to effectively optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8 μm process parameters, simulated performance features of a total-FET transimpedance amplifier operating at 7.2 GHz, which is close to the technology fT of 12 GHz, are presented. The results are superior to those of similar recent designs and comparable to IC designs using GaAs technology. A detailed analysis of the design architecture, including a discussion on the effects of moving toward more FET-based designs is presented.
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References
- Abidi, A., 1988, "On the Choice of Optimum FET Size in Wide-band Transimpedance Amplifiers," J. of Lightwave Technology, Vol. 6(1), pp. 64-66.
- Halkias, G., Haralabidis, N., Kyriakis-Bitzaros, E. D. and Katsafouros, S., 2000, "1.7 GHz Bipolar Optoelectronic Receiver using Conventional 0.8?m BiCMOS Process," IEEE Int. Symp. on Circuits & Systems, pp. V417-V420.
- Haralabidis, N., Katsafouros, S. and Halkias, G., 2000, "A 1 GHz CMOS Transimpedance Amplifier for Chipto- chip Optical Interconnects," IEEE Int. Symp. On Circuits & Systems, pp. V421-V424.
- Huber, D., Bauknecht, R., Bergamaschi, C., Bitter, M., Huber, A., Morf, T., Neiger, A., Rohner, M., Schnyder, I., Schwarz, V. and Jackel, H., 2000, "InPInGaAs Single HBT Technology for Photoreceiver OEIC's at 40 Gb/s and beyond," J. of Lightwave Technology, Vol. 18, pp. 992-999.
- Ikeda, H., Ohshima, T., Tsunotani, M., Ichioka, T. and Kimura, T., 2001, "An Auto-gain Control Transimpedance Amplifier with low Noise and wide input Dynamic Range 10-Gb/s Optical Communication Systems," IEEE J. of Solid-State Circuits, Vol. 36(9), pp. 1303-1308.
- Minasian, R., 1987, "Optimum Design of a 4Gbit/s GaAs MESFET Optical Preamplifier," J. of Lightwave Technology, Vol. LT-5(3), pp. 373-379.
- Park, S. and Yoo, H., 2003, "2.5 Gbit/s CMOS transimpedance amplifier for optical communication applications," Electronics Letters, Vol. 39(2), pp. 211-212.Smith, R. and Personick, S., 1980, "Receiver Design for Optical Fiber Communication Systems", Chapter 4. Publisher: Springer-Verlag.
- Toumazou, C. and Park, S., 1996, "Wideband Low Noise CMOS Transimpedance Amplifier for Gigahertz Operation," Electronics Letters, Vol. 32(13), pp. 1194-1996.
- Vansiri, T. and Toumazou, C., 1995, "Integrated High Frequency Low-noise Curret-mode Optical Transimpedance Preamplifiers: Theory and Practice," IEEE J. of Solid-State Circuits, Vol. 30(6), pp. 677- 685.
- Yoneyama, M., Miyamoto, Y., Otsuji, T., Toba, H., Yamane, Y., Ishibashi, T. and Miyazawa, H., 2000, "Fully Electrical 40Gb/s TDM System Prototype Based InP HEMT Digital IC Technologies," J. of Lightwave Technology, Vol. 18, pp. 34-43
References
Abidi, A., 1988, "On the Choice of Optimum FET Size in Wide-band Transimpedance Amplifiers," J. of Lightwave Technology, Vol. 6(1), pp. 64-66.
Halkias, G., Haralabidis, N., Kyriakis-Bitzaros, E. D. and Katsafouros, S., 2000, "1.7 GHz Bipolar Optoelectronic Receiver using Conventional 0.8?m BiCMOS Process," IEEE Int. Symp. on Circuits & Systems, pp. V417-V420.
Haralabidis, N., Katsafouros, S. and Halkias, G., 2000, "A 1 GHz CMOS Transimpedance Amplifier for Chipto- chip Optical Interconnects," IEEE Int. Symp. On Circuits & Systems, pp. V421-V424.
Huber, D., Bauknecht, R., Bergamaschi, C., Bitter, M., Huber, A., Morf, T., Neiger, A., Rohner, M., Schnyder, I., Schwarz, V. and Jackel, H., 2000, "InPInGaAs Single HBT Technology for Photoreceiver OEIC's at 40 Gb/s and beyond," J. of Lightwave Technology, Vol. 18, pp. 992-999.
Ikeda, H., Ohshima, T., Tsunotani, M., Ichioka, T. and Kimura, T., 2001, "An Auto-gain Control Transimpedance Amplifier with low Noise and wide input Dynamic Range 10-Gb/s Optical Communication Systems," IEEE J. of Solid-State Circuits, Vol. 36(9), pp. 1303-1308.
Minasian, R., 1987, "Optimum Design of a 4Gbit/s GaAs MESFET Optical Preamplifier," J. of Lightwave Technology, Vol. LT-5(3), pp. 373-379.
Park, S. and Yoo, H., 2003, "2.5 Gbit/s CMOS transimpedance amplifier for optical communication applications," Electronics Letters, Vol. 39(2), pp. 211-212.Smith, R. and Personick, S., 1980, "Receiver Design for Optical Fiber Communication Systems", Chapter 4. Publisher: Springer-Verlag.
Toumazou, C. and Park, S., 1996, "Wideband Low Noise CMOS Transimpedance Amplifier for Gigahertz Operation," Electronics Letters, Vol. 32(13), pp. 1194-1996.
Vansiri, T. and Toumazou, C., 1995, "Integrated High Frequency Low-noise Curret-mode Optical Transimpedance Preamplifiers: Theory and Practice," IEEE J. of Solid-State Circuits, Vol. 30(6), pp. 677- 685.
Yoneyama, M., Miyamoto, Y., Otsuji, T., Toba, H., Yamane, Y., Ishibashi, T. and Miyazawa, H., 2000, "Fully Electrical 40Gb/s TDM System Prototype Based InP HEMT Digital IC Technologies," J. of Lightwave Technology, Vol. 18, pp. 34-43