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References
- Slonczewski, J.C. Current-driven excitation of magnetic multilayers. J. Magn. Magn. Mater., 1996, 159, L1−L7.
- Berger, L. Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev. B, 1996, 54, 9353-9358.
- Myers, E.B., Ralph, D.C., Katine, J.A., Louie, R.N. and Buhrman, R.A. Current-induced switching of domains in magnetic multilayer devices. Science, 1999, 285, 867-870.
- Katine, J.A., Albert, F.J., Buhrman, R.A., Myers, E.B. and Ralph, D.C. Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co. Phys. Rev. Lett., 2000, 84, 3149-3152.
- Sbiaa, R., Meng, H. and Piramanayagam, S.N. Materials with perpendicular magnetic anisotropy for magnetic random access memory. Phys. Status Solidi RRL, 2011, 5, 413-419.
- Mangin, S., Ravelosona, D., Katine, J.A., Carey, M.J., Terris, B.D. and Fullerton, E.E., Current-induced magnetization reversal in nanopillars with perpendicular anisotropy. Nature Mater., 2006, 5, 210-215.
- Meng, H. and Wang, J.P. Spin transfer in nanomagnetic devices with perpendicular anisotropy. Appl. Phys. Lett., 2006, 88, 172506-172508.
- Law, R., Sbiaa, R., Liew, T. and Chong, T.C. Magnetoresistance and switching properties of Co-Fe/Pd-based perpendicular anisotropy single- and dual-spin valves. IEEE Trans. Magn., 2008, 44, 2612-2615.
- Ikeda, S., Miura, K., Yamamoto, H., Mizunuma, K., Gan, H.D., Endo, M., Kanal, S., Hayakawa, J., Mstsukura, F. and Ohno, H. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction. Nature Mater., 2010, 9, 721-724.
- Yakushiji, K., Saruya, T., Kubota, H., Fukushima, A., Nagahama, T., Yuasa, S. and Ando, K. Ultrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions. Appl. Phys. Lett., 2010, 97, 232508-232510.
- Rahman, M.T., Lyle, A., Hu, G., Gallagher, W.J. and Wang, J.P. High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer. J. Appl. Phys., 2011, 109, 07C709-07C711.
- Sbiaa, R., Law, R., Lua, S., Tan, E.L., Tahmasebi, T., Wang, C.C. and Piramanayagam, S.N. Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy. Appl. Phys. Lett., 2011, 99, 092506-092506-3.
- Worledge, D.C., Hu, G., Abraham, D.W., Sun, J.Z., Trouilloud, P.L., Nowak, J., Brown, S., Gaidis, M.C., O’Sullivan, E.J. and Robertazzi, R.P. Spin torque switching of perpendicular Ta/CoFeB/MgO-based magnetic tunnel junctions. Appl. Phys. Lett., 2011, 98, 022501-1-022501-3.
- Amiri, P.K., Zeng, Z.M., Langer, J., Zhao, H., Rowlands, G., Chen, Y.J., Krivorotov, I.N., Wang, J.P., Jiang, H.W., Katine, J.A., Huai, Y., Galatsis, K. and Wang, K.L. Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions. Appl. Phys. Lett., 2011, 98, 112507-1-112507-4.
- Lee, D.Y., Shim, T.H. and Park, J.G. Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions. Appl. Phys. Lett., 2013, 102, 212409-1-212409-3.
- Koo, J.W., Mitani, S., Sasaki, T.T., Sukegawa, H., Wen, Z.C., Ohkubo, T., Niizeki, T., Inomata, K. and HONO, K. Large perpendicular magnetic anisotropy at Fe/MgO interface. Appl. Phys. Lett., 2013, 103, 192401-1-192401-3.
- Meng, H., Sbiaa, R., Akhtar, M.A.K., Liu, R.S., Naik, V.B. and Wang, C.C. Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy. Appl. Phys. Lett., 2012, 100, 122405-1-122405-3.
- Ozatay, O., Emley, N.C., Braganca, P.M,. Garcia, A.G.F., Fuchs, G.D., Krivorotov, I.N., Buhrman, R.A. and Ralph, D.C. Spin transfer by nonuniform current injection into a nanomagnet. Appl. Phys. Lett., 2006, 88, 202502-202504.
- Sato, H., Yamanouchi, M., Miura, K., Ikeda, S., Gan, H.D., Mizunuma, K., Koizumi, R., Matsukura, F. and Ohno, H. Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions. Appl. Phys. Lett., 2011, 99, 042501-1-042501-3.
- Meng, H., Sbiaa, R., Lua, S.Y.H., Wang, C.C., Akhtar, M.A.K., Wong, S.K., Luo, P., Carlberg, C.J.P. and Ang, K.S.A. Low current density induced spin-transfer torque switching in CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy. J. Phys. D: Appl. Phys., 2011, 44, 405001-1-405001-4.
- Jiang, X., Moriya, R. and Parkin, S. Reducing spin torque switching current density by boron insertion into a CoFeB free layer of a magnetic tunnel junction. Appl. Phys. Lett., 2012, 100, 172407-1-172407-4.
- Wang, C.C., Bin Akhtar, M.A.K., Sbiaa, R., Meng, H., Sunny, L.Y.H., Wong, S.K., Ping, L., Carlberg, P. and Arthur, A.K.S. Size dependence effect in MgO-based CoFeB tunnel junctions with perpendicular magnetic anisotropy. Jpn. J. Appl. Phys., 2012, 51, 013101-1-013101-5.
- Sbiaa, R. and Morita, H. Magnetoresistance and thermal stability enhancement in FeCr-based spin valves. Appl. Phys. Lett., 2004, 84, 5139-5141.
- Sato, H., Yamanouchi, M., Ikeda, S., Fukami, S., Matsukura, F. and Ohno, H. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure. Appl. Phys. Lett., 2012, 101, 022414-1-022414-3.
- Naik, V.B., Meng, H. and Sbiaa, R. Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction. AIP Adv., 2012, 2, 42182-1-42182-9.
- Liu, X., Zhang, W., Carter, M.J. and Xiao, G. Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions. J. Appl. Phys., 2011, 110, 033910-1-033910-5.
- Kiselev, S.I., Sankey, J.C., Krivorotov, I.N., Emley, N.C., Schoelkope, R.J., Buhrman, R.A. and Ralph, D.C. Microwave oscillations of a nanomagnet driven by a spin-polarized current. Nature, 2003, 425, 380-383.
- Sim, C.H., Moneck, M., Liew, T. and Zhu, J.-G. Frequency-tunable perpendicular spin torque oscillator. J. Appl. Phys., 2012, 111, 07C914-1-07C914-3.
- Houssameddine, D., Ebels, U., Delaet, B., Rodmacq, B., Firastrau, I., Ponthenier, F., Brunet, M., Thirion, C., Michel, J.P., Prejbeanu-Buda, L., Cyrille, M.C., Redon, O. and Dieny, B. Spin-torque oscillator using a perpendicular polarizer and a planar free layer. Nature Mater., 2007, 6, 447-453.
- Heinonen, O.G., Stokes, S.W. and J.Y.YI. Perpendicular Spin Torque in Magnetic Tunnel Junctions. Phys. Rev. Lett., 2010, 105, 66602-66605.
- Devolder, T., Crozat, P. and Chappert, C., Miltat J. and Yagami, K. Instability threshold versus switching threshold in spin-transfer-induced magnetization switching. Phys. Rev. B, 2005, 71, 184401-1-184401.
References
Slonczewski, J.C. Current-driven excitation of magnetic multilayers. J. Magn. Magn. Mater., 1996, 159, L1−L7.
Berger, L. Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev. B, 1996, 54, 9353-9358.
Myers, E.B., Ralph, D.C., Katine, J.A., Louie, R.N. and Buhrman, R.A. Current-induced switching of domains in magnetic multilayer devices. Science, 1999, 285, 867-870.
Katine, J.A., Albert, F.J., Buhrman, R.A., Myers, E.B. and Ralph, D.C. Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co. Phys. Rev. Lett., 2000, 84, 3149-3152.
Sbiaa, R., Meng, H. and Piramanayagam, S.N. Materials with perpendicular magnetic anisotropy for magnetic random access memory. Phys. Status Solidi RRL, 2011, 5, 413-419.
Mangin, S., Ravelosona, D., Katine, J.A., Carey, M.J., Terris, B.D. and Fullerton, E.E., Current-induced magnetization reversal in nanopillars with perpendicular anisotropy. Nature Mater., 2006, 5, 210-215.
Meng, H. and Wang, J.P. Spin transfer in nanomagnetic devices with perpendicular anisotropy. Appl. Phys. Lett., 2006, 88, 172506-172508.
Law, R., Sbiaa, R., Liew, T. and Chong, T.C. Magnetoresistance and switching properties of Co-Fe/Pd-based perpendicular anisotropy single- and dual-spin valves. IEEE Trans. Magn., 2008, 44, 2612-2615.
Ikeda, S., Miura, K., Yamamoto, H., Mizunuma, K., Gan, H.D., Endo, M., Kanal, S., Hayakawa, J., Mstsukura, F. and Ohno, H. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction. Nature Mater., 2010, 9, 721-724.
Yakushiji, K., Saruya, T., Kubota, H., Fukushima, A., Nagahama, T., Yuasa, S. and Ando, K. Ultrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions. Appl. Phys. Lett., 2010, 97, 232508-232510.
Rahman, M.T., Lyle, A., Hu, G., Gallagher, W.J. and Wang, J.P. High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer. J. Appl. Phys., 2011, 109, 07C709-07C711.
Sbiaa, R., Law, R., Lua, S., Tan, E.L., Tahmasebi, T., Wang, C.C. and Piramanayagam, S.N. Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy. Appl. Phys. Lett., 2011, 99, 092506-092506-3.
Worledge, D.C., Hu, G., Abraham, D.W., Sun, J.Z., Trouilloud, P.L., Nowak, J., Brown, S., Gaidis, M.C., O’Sullivan, E.J. and Robertazzi, R.P. Spin torque switching of perpendicular Ta/CoFeB/MgO-based magnetic tunnel junctions. Appl. Phys. Lett., 2011, 98, 022501-1-022501-3.
Amiri, P.K., Zeng, Z.M., Langer, J., Zhao, H., Rowlands, G., Chen, Y.J., Krivorotov, I.N., Wang, J.P., Jiang, H.W., Katine, J.A., Huai, Y., Galatsis, K. and Wang, K.L. Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions. Appl. Phys. Lett., 2011, 98, 112507-1-112507-4.
Lee, D.Y., Shim, T.H. and Park, J.G. Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions. Appl. Phys. Lett., 2013, 102, 212409-1-212409-3.
Koo, J.W., Mitani, S., Sasaki, T.T., Sukegawa, H., Wen, Z.C., Ohkubo, T., Niizeki, T., Inomata, K. and HONO, K. Large perpendicular magnetic anisotropy at Fe/MgO interface. Appl. Phys. Lett., 2013, 103, 192401-1-192401-3.
Meng, H., Sbiaa, R., Akhtar, M.A.K., Liu, R.S., Naik, V.B. and Wang, C.C. Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy. Appl. Phys. Lett., 2012, 100, 122405-1-122405-3.
Ozatay, O., Emley, N.C., Braganca, P.M,. Garcia, A.G.F., Fuchs, G.D., Krivorotov, I.N., Buhrman, R.A. and Ralph, D.C. Spin transfer by nonuniform current injection into a nanomagnet. Appl. Phys. Lett., 2006, 88, 202502-202504.
Sato, H., Yamanouchi, M., Miura, K., Ikeda, S., Gan, H.D., Mizunuma, K., Koizumi, R., Matsukura, F. and Ohno, H. Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions. Appl. Phys. Lett., 2011, 99, 042501-1-042501-3.
Meng, H., Sbiaa, R., Lua, S.Y.H., Wang, C.C., Akhtar, M.A.K., Wong, S.K., Luo, P., Carlberg, C.J.P. and Ang, K.S.A. Low current density induced spin-transfer torque switching in CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy. J. Phys. D: Appl. Phys., 2011, 44, 405001-1-405001-4.
Jiang, X., Moriya, R. and Parkin, S. Reducing spin torque switching current density by boron insertion into a CoFeB free layer of a magnetic tunnel junction. Appl. Phys. Lett., 2012, 100, 172407-1-172407-4.
Wang, C.C., Bin Akhtar, M.A.K., Sbiaa, R., Meng, H., Sunny, L.Y.H., Wong, S.K., Ping, L., Carlberg, P. and Arthur, A.K.S. Size dependence effect in MgO-based CoFeB tunnel junctions with perpendicular magnetic anisotropy. Jpn. J. Appl. Phys., 2012, 51, 013101-1-013101-5.
Sbiaa, R. and Morita, H. Magnetoresistance and thermal stability enhancement in FeCr-based spin valves. Appl. Phys. Lett., 2004, 84, 5139-5141.
Sato, H., Yamanouchi, M., Ikeda, S., Fukami, S., Matsukura, F. and Ohno, H. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure. Appl. Phys. Lett., 2012, 101, 022414-1-022414-3.
Naik, V.B., Meng, H. and Sbiaa, R. Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction. AIP Adv., 2012, 2, 42182-1-42182-9.
Liu, X., Zhang, W., Carter, M.J. and Xiao, G. Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions. J. Appl. Phys., 2011, 110, 033910-1-033910-5.
Kiselev, S.I., Sankey, J.C., Krivorotov, I.N., Emley, N.C., Schoelkope, R.J., Buhrman, R.A. and Ralph, D.C. Microwave oscillations of a nanomagnet driven by a spin-polarized current. Nature, 2003, 425, 380-383.
Sim, C.H., Moneck, M., Liew, T. and Zhu, J.-G. Frequency-tunable perpendicular spin torque oscillator. J. Appl. Phys., 2012, 111, 07C914-1-07C914-3.
Houssameddine, D., Ebels, U., Delaet, B., Rodmacq, B., Firastrau, I., Ponthenier, F., Brunet, M., Thirion, C., Michel, J.P., Prejbeanu-Buda, L., Cyrille, M.C., Redon, O. and Dieny, B. Spin-torque oscillator using a perpendicular polarizer and a planar free layer. Nature Mater., 2007, 6, 447-453.
Heinonen, O.G., Stokes, S.W. and J.Y.YI. Perpendicular Spin Torque in Magnetic Tunnel Junctions. Phys. Rev. Lett., 2010, 105, 66602-66605.
Devolder, T., Crozat, P. and Chappert, C., Miltat J. and Yagami, K. Instability threshold versus switching threshold in spin-transfer-induced magnetization switching. Phys. Rev. B, 2005, 71, 184401-1-184401.